We report the prepn. and phys. properties of reduced anatase TiO2-𝛿 thin films obtained via a low-temp. (low-T) redn. using CaH2. The oxygen amts. were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ohm cm at room temp., both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concn. of 1.6 x 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of 𝛿. [on SciFinder(R)]