Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)

Year: 2008 DOI: 10.1021/nl802433u

Extra Information

Robyn Woo, Rui Xiao, Yoji Kobayashi, Li Gao, Niti Goel, Mantu K. Hudait, Thomas E. Mallouk, R. F. Hicks.   Nano Letters, 2008, 8, 4664-4669.

Abstract

The relation between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) was studied by TEM, photoluminescence spectroscopy, and photoelectrochem. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by OMVPE using liq. indium catalyst. Room temp. photoluminescence from the defect-free nanowires is 7 times more intense than that from the wires with twin boundaries. An open-circuit photovoltage of 100 mV is obsd. for photoelectrochem. cells made with the defect-free nanowires, whereas no photovoltage is recorded for those with twins. [on SciFinder(R)]